Global simulation of a Czochralski furnace for silicon crystal growth against the assumed thermophysical properties

作者：Li Y R^*; Yu C J; Wu S Y; Peng L; Imaishi N

来源：Crystal Research and Technology, 2006, 41(7): 636-644.

DOI：10.1002/crat.200510642

• computer simulation
• finite element method
• Czochralski method
• silicon
• thermophysical properties

In order to understand the effects of the thermophysical properties of the melt on the transport phenomena in the Czochralski (Cz) furnace for the single crystal growth of silicon, a set of global analyses of momentum, heat and mass transfer in small Cz furnace (crucible diameter: 7.2 cm, crystal diameter: 3.5 cm, operated in a 10 Torr argon flow environment) was carried out using the finite-element method. The global analysis assumed a pseudosteady axisymmetric state with laminar flow. The results show that different thermophysical properties will bring different variations of the heater power, the deflection of the melt/crystal interface, the axial temperature gradient in the crystal on the center of the melt/crystal interface and the average oxygen concentration along the melt/crystal interface. The application of the axial magnetic field is insensitive to this effect. This analysis reveals the importance of the determination of the thermophysical property in numerical simulation.

• 出版日期2006-7
• 单位重庆大学