Facile Encapsulation of Oxide based Thin Film Transistors by Atomic Layer Deposition based on Ozone

作者：Fakhri Morteza; Babin Nikolai; Behrendt Andreas; Jakob Timo; Goerrn Patrick; Riedl Thomas^*

来源：Advanced Materials, 2013, 25(20): 2821-2825.

DOI：10.1002/adma.201300549

• metal oxide
• thin-film transistor
• encapsulation
• ALD
• ozone

A simplified encapsulation strategy for metal-oxide based TFTs, using ozone instead of water as an oxygen source in a low-temperature ALD process is demonstrated. Thereby, the threshold voltage remains unaltered and the hysteresis is permanently reduced. Costly energy- and time-consuming post-treatment processes can be avoided. This concept is widely applicable to various encapsulation materials (e. g., Al2O3, TiO2, ZrO2) and metal-oxide channel semiconductors (e. g., zinc-tin-oxide (ZTO), indium-gallium-zinc-oxide (IGZO)).

• 出版日期2013-5-28