摘要

We report on the time-resolved measurement of the in-plane (v()) and cross-plane (v) components of the heat transfer velocity in GaAs/Al(0.15)Ga(0.85)As quantum-cascade heterostructures. We compared the heating and cooling stages both in the active region and in the substrate with models of heat transfer in nanostructures. We found that v(perpendicular to) is reduced by a factor of similar to 6.5 with respect to that of the corresponding bulk material due to the additional thermal resistance of each interface and to the phonon interference effects in the multilayered structure. The v() component is reduced by similar to 30% due to interface roughness.

  • 出版日期2010-3-8