Optical Properties of p-Bi2S3:Sn2+ and n-Bi2S3:Sn4+ Films and Photovoltaic Properties of Their Heterostructures

作者：He H Y^*; Liu T T

来源：JOM, 2014, 66(6): 979-984.

DOI：10.1007/s11837-014-0901-7

The p-Bi2S3:Sn2+ and n-Bi2S3:Sn4+ films and their heterojunction films with uniform and dense microstructures were deposited on indium tin oxide (ITO) glass substrate by a chemical bath deposition. The n-Bi2S3:Sn4+ and p-Bi2S3:Sn2+ films had average particle sizes of similar to 5-25 nm and similar to 1-4 nm, and optical band gaps of similar to 1.36-1.59 eV and similar to 1.61-1.80 eV, respectively. The short-circuit current density, open-circuit voltage, and efficiency of the ITO/p-Bi2S3:Sn2+/n-Bi2S3:Sn4+/Pt film photovoltaic cells increased with the increase in their thicknesses. The cell with maximal thickness of similar to 630 nm had short-circuit current density of similar to 6.5 mA/cm(2), open-circuit voltage of similar to 2.41 V, and photovoltaic efficiency of similar to 10.31% under irradiation of visible light with intensity of 100 mW/cm(2).

• 出版日期2014-6
• 单位陕西科技大学