Developing a Robust Recombination Contact to Realize Monolithic Perovskite Tandems With Industrially Common p-Type Silicon Solar Cells

作者：Hoye Robert L Z; Bush Kevin A; Oviedo Felipe; Sofia Sarah E; Thway Maung; Li Xinhang; Liu Zhe; Jean Joel; Mailoa Jonathan P; Osherov Anna; Lin Fen; Palmstrom Axel F; Bulovic Vladimir; McGehee Michael D; Peters Ian Marius; Buonassisi Tonio

来源：IEEE Journal of Photovoltaics, 2018, 8(4): 1023-1028.

DOI：10.1109/JPHOTOV.2018.2820509

• Aluminum back-surface field (Al-BSF)
• nickel oxide
• perovskite-silicon tandem solar cells
• p-type silicon cell
• recombination contact
• stability

Although two-terminal perovskite-silicon tandem solar cells have rapidly increased in efficiency, they have only been demonstrated with n-type silicon, which currently constitutes less than 5% of the global photovoltaics market. In this paper, we realize the first two-terminal perovskite tandem with p-type silicon by developing a recombination contact that enables voltage addition without damaging either subcell. We find that silicon interhand recombination contacts are limited by a SiOx charge-extraction barrier, which forms during oxidative top-cell fabrication. A sputtered 30-nm indium tin oxide layer is found to protect the silicon cell surface from oxidation, while forming a recombination contact with the p-type nickel oxide hole transport layer for the perovskite top cell. Using this recombination contact we achieve voltage addition between the perovskite top cell and aluminum back-surface field p-type silicon bottom cell. We also find that minimizing moisture on the nickel oxide surface is important for achieving a stable open-circuit voltage under illumination. The recombination contact developed herein could play an important role in near-future developments.

• 出版日期2018-7
• 单位MIT