Phase selective growth and characterization of vanadium dioxide films on silicon substrates

作者：Watanabe Tomo^*; Okimura Kunio; Hajiri Tetsuya; Kimura Shin ichi; Sakai Joe

来源：Journal of Applied Physics, 2013, 113(16): 163503.

DOI：10.1063/1.4802652

We report on selective growth of VO2 films with M1, M2, and intermediate T phases on silicon (Si) substrates by using inductively coupled plasma (ICP)-assisted sputtering (ICPS) under particular conditions. The film composed of M2 phase was proved to be under strong in-plane compressive stress, which is consistent with stress-induced M2 phase. Crystalline structural phase transition (SPT) properties of these films were demonstrated together with infrared light transmittance as a measure of insulator-metal transition (IMT) against temperature. Characteristic correlations between SPT and IMT for films with M2 and intermediate-T phases were reported. Ultraviolet photoelectron spectroscopy measurements probed an energy gap of the film in the M2 phase at around 0.4 eV from the Fermi level indicating the presence of a Mott gap.

• 出版日期2013-4-28