High-performance a MoS2 nanosheet-based nonvolatile memory transistor with a ferroelectric polymer and graphene source-drain electrode

作者：Lee Young Tack^*; Hwang Do Kyung; Im Seongil

来源：Journal of the Korean Physical Society, 2015, 67(9): L1499-L1503.

DOI：10.3938/jkps.67.1499

• MoS2
• PVDF-TrFE
• Ferroelectric field-effect transistor (FeFET)

Two-dimensional (2D) van der Waals (vdWs) materials are a class of new materials due to their unique physical properties. Of the many 2D vdWs materials, molybdenum disulfide (MoS2) is a representative n-type transition-metal dichalcogenide (TMD) semiconductor. Here, we report on a high-performance MoS2 nanosheet-based nonvolatile memory transistor with a poly(vinylidenefluoride-trifluoroethylene) (P(VDF-TrFE)) ferroelectric top gate insulator. In order to enhance the ohmic contact property, we use graphene flakes as source/drain electrodes prepared by using the direct imprinting method with an elastomer stamp. The MoS2 ferroelectric field-effect transistor (FeFET) shows the highest linear electron mobility value of 175 cm(2)/Vs with a high on/off current ratio of more than 10(7), and a very clear memory window of more than 15 V. The program and erase dynamics and the static retention properties are also well demonstrated.

• 出版日期2015-11