Memory characteristics of an MOS capacitor structure with double-layer semiconductor and metal heterogeneous nanocrystals

作者：Ni, Henan^*; Wu, Liangcai; Song, Zhitang; Hui, Chun

来源：Chinese Journal of Semiconductors, 2009, 30(11): 114003.

DOI：10.1088/1674-4926/30/11/114003

• Capacitor structures
• Charge storage capacity
• Charge trap
• Co-evaporated
• Direct tunneling
• Double layers
• Flat voltage
• Gate oxide
• matrix
• Metal nanocrystals
• Metal oxide semiconductor
• Nanocrystal memories
• Non-volatile memories
• Non-volatile memory application
• Nonvolatile memory
• Retention characteristics
• Retention time
• Self-assembled
• Si nanocrystal
• Single layer

An MOS (metal oxide semiconductor) capacitor structure with double-layer heterogeneous nanocrystals consisting of semiconductor and metal embedded in a gate oxide for nonvolatile memory applications has been fabricated and characterized. By combining vacuum electron-beam co-evaporated Si nanocrystals and self-assembled Ni nanocrystals in a SiO2matrix, an MOS capacitor with double-layer heterogeneous nanocrystals can have larger charge storage capacity and improved retention characteristics compared to one with single-layer nanocrystals. The upper metal nanocrystals as an additional charge trap layer enable the direct tunneling mechanism to enhance the flat voltage shift and prolong the retention time.

• 出版日期2009
• 单位上海交通大学