Design considerations for a compact proton beam writing system aiming for fast sub-10 nm direct write lithography

作者：Xu Xinxin; Liu Nannan; Raman P Santhana; Qureshi Sarfraz; Pang Rudy; Khursheed Anjam; van Kan Jeroen A^*

来源：Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms , 2017, 404: 243-249.

DOI：10.1016/j.nimb.2016.12.031

• Proton beam writing
• Nano-aperture ion source
• Sub-10 nm
• Lithography

In order to realize sub-10 nm feature size by proton beam writing (PBW) with writing speed comparable to electron beam lithography (EBL), a 200 kV compact PBW system is proposed here. In this system, a new nano-aperture electron impact ion source with a potential reduced brightness of 10(6) A/(m(2) srV) will be employed. To achieve sub-10 nm spot sizes with pA beam current, two different focusing lens configurations were evaluated. Both of these configurations were found to be theoretically capable of achieving sub-10 nm beam spot size.

• 出版日期2017-8-1