BVCEO ENGINEERING IN SOI LBT STRUCTURE WITH TOP CONTACTED BASE

作者：Koricic Marko^*; Suligoj Tomislav

来源：Informacije Midem-Journal of Microelectronics Electronic Components and Materials, 2011, 41(2): 77-85.

• SOI
• lateral bipolar transistor
• extrinsic base
• charge sharing effect
• common-emitter breakdown voltage
• cutoff frequency

Properties of SOI LBT structure with the base contact on top are analyzed by device simulations. The effect of the extrinsic base width on the common-emitter breakdown voltage (BVCEO) is studied in detail. Charge sharing between extrinsic and intrinsic base acceptors can be controlled to achieve fully depleted collector. Shielding of the electric field across intrinsic junction by the extrinsic base electric field can be used to limit the peak value of the electric field along the current path in the collector-base depletion region and to increase the value of BVCEO. Two peaks of electric field appear in the base-collector depletion region - the first one at the intrinsic junction and the second in the drift region toward extrinsic collector. The area in which breakdown occurs depends on the value of the electric field in two peaks, which can be controlled by the extrinsic base width (w(bext)).

• 出版日期2011