Development of a High-Temperature Gate Drive and Protection Circuit Using Discrete Components

作者：Qi Feng^*; Xu Longya^*

来源：IEEE Transactions on Power Electronics, 2017, 32(4): 2957-2963.

DOI：10.1109/TPEL.2016.2573643

• Commercial off-the-shelf
• desaturation protection
• galvanic isolation circuit
• gate drive circuit
• high temperature
• SiC MOSFET
• under voltage protection

This paper presents a high-temperature (HT) gate drive and protection circuit for Silicon-Carbide (SiC) power MOSFETs entirely built from commercial off-the-shelf HT discrete components. To estimate cost reduction, a brief comparison was made between the proposed circuit and a commercial circuit using silicon-on-insulator integrated circuits. To evaluate performance, power tests were conducted up to 180 degrees C in a thermal chamber. Eventually, the proposed circuit achieved a 90% cost reduction, and all functions were validated by experiments at 180 degrees C. This demonstrated that the proposed circuit is a cost-effective solution for contemporary HT applications.

• 出版日期2017-4