Tiered deposition of sub-5 nm ferroelectric Hf1-xZrxO2 films on metal and semiconductor substrates

作者：Walters Glen^*; Shekhawat Aniruddh; Rudawski Nicholas G; Moghaddam Saeed; Nishida Toshikazu

来源：Applied Physics Letters, 2018, 112(19): 192901.

DOI：10.1063/1.5027516

Using a tiered deposition approach, Hf1-xZrxO2 (HZO) films with varying atomic layer deposition (ALD) cycles from 36 to 52 cycles were grown on Ge, Ir, and TiN substrates in single runs and annealed at 500 degrees C. 40 ALD cycle films grown on Ir exhibit a switched polarization (Psw) of 13 mu C/cm(2), while those grown on Ge and TiN did not exhibit measurable Psw values until 44 and 52 ALD cycles, respectively. High-resolution cross-sectional transmission electron microscopy confirmed these results; the ferroelectric films are crystalline with defined lattice fringes, while non-ferroelectric films remain amorphous. 52 ALD cycle 1:1 HZO grown on Ge had the highest Psw of all the films fabricated at 39 mu C/cm(2), while the 1:1 HZO grown on TiN displayed continuous wake-up and no fatigue up to 10(10) cycles with the Psw increasing from <1 mu C/cm(2) to 21 mu C/cm(2). Published by AIP Publishing.

• 出版日期2018-5-7