Dose rate effects of γ irradiation on CCDs

作者：Wu D.-Y.; Wen L.; Wang C.-M.; He C.-F.; Guo Q.^*; Li Y.-D.; Zeng J.-Z.; Wang B.; Liu Y.

来源：Chinese Journal of Luminescence, 2016, 37(6): 711-719.

DOI：10.3788/fgxb20163706.0711

• Charge coupled device
• Dark pixel statistics
• Dark signal
• Enhanced low-dosed rate sensitivity

The experiments of dose rate on charge coupled devices(CCDs) were carried out to investigate the relationship between the dose rate and the electrical parameters of the device, and the degradation mechanism was analyzed. With the accumulation of the dose, the dark signal (DS)and dark non-uniformly signal(DNS) increase significantly, and the both charge transfer efficiency (CTE)and saturation output voltage(SOV) tend to decrease slowly. The whole dark pixel value uplifts and the non-uniform between pixels becomes obviously. The dark signal of the CCD is negatively correlated with the dose rate, and the device presents the potential of the-low-dose-rate-damage enhancement effect. It is considered that the dose rate effect is caused by the competition between the interface states and oxide traps, and the mechanism is explained by the electron-hole pair recombination model and the damage model in the annealing process.

• 出版日期2016
• 单位中国科学院大学