Fabrication and Optical Properties of Strain-free Self-assembled Mesoscopic GaAs Structures

作者：Covre da Silva Saimon Filipe; Mardegan Thayna; de Araujo Sidnei Ramis; Ospina Ramirez Carlos Alberto; Kiravittaya Suwit; Couto Odilon D D Jr; Iikawa Fernando; Deneke Christoph

来源：Nanoscale Research Letters, 2017, 12(1): 61.

DOI：10.1186/s11671-016-1782-1

• Strain-free quantum dots
• Local hole etching
• Ga-assisted deoxidation
• Molecular beam epitaxy

We use a combined process of Ga-assisted deoxidation and local droplet etching to fabricate unstrained mesoscopic GaAs/AlGaAs structures exhibiting a high shape anisotropy with a length up to 1.2 mu m and a width of 150 nm. We demonstrate good controllability over size and morphology of the mesoscopic structures by tuning the growth parameters. Our growth method yields structures, which are coupled to a surrounding quantum well and present unique optical emission features. Microscopic and optical analysis of single structures allows us to demonstrate that single structure emission originates from two different confinement regions, which are spectrally separated and show sharp excitonic lines. Photoluminescence is detected up to room temperature making the structures the ideal candidates for strain-free light emitting/detecting devices.

• 出版日期2017-1-21