A new low voltage fast SONOS memory with high-k dielectric

作者：Gritsenko VA^*; Nasyrov KA; Novikov YN; Aseev AL; Yoon SY; Lee JW; Lee EH; Kim CW

来源：Solid-State Electronics, 2003, 47(10): 1651-1656.

DOI：10.1016/S0038-1101(03)00174-6

• SONOS
• EEPROM
• FLASH
• silicon nitride
• high-k dielectrics

The comparison of simulated write/erase characteristics of silicon-oxide-nitride-oxide-silicon (SONOS) nonvolatile memory with different oxides SiO2, Al2O3 and ZrO2 as a top dielectric was made. We demonstrate, that an application of high-k dielectrics allows to decrease the write/erase programming voltage amplitude or programming time from 1 ms to 10 mus. The ZrO2 suppresses parasitic electron injection from polysilicon gate. Also the design of SONOS memory based on high-k dielectrics is promising for terabit scale using hot carriers injection EEPROM and DRAM memory.

• 出版日期2003-10