Low temperature grown GaNAsSb: A promising material for photoconductive switch application

作者：Tan K H^*; Yoon S F; Wicaksono S; Loke W K; Li D S; Saadsaoud N; Tripon Canseliet C; Lampin J F; Decoster D; Chazelas J

来源：Applied Physics Letters, 2013, 103(11): 111113.

DOI：10.1063/1.4820797

We report a photoconductive switch using low temperature grown GaNAsSb as the active material. The GaNAsSb layer was grown at 200 degrees C by molecular beam epitaxy in conjunction with a radio frequency plasma-assisted nitrogen source and a valved antimony cracker source. The low temperature growth of the GaNAsSb layer increased the dark resistivity of the switch and shortened the carrier lifetime. The switch exhibited a dark resistivity of 10(7) Omega cm, a photo-absorption of up to 2.1 mu m, and a carrier lifetime of similar to 1.3 ps. These results strongly support the suitability of low temperature grown GaNAsSb in the photoconductive switch application.

• 出版日期2013-9-9
• 单位南阳理工学院