Amphoteric phosphorus doping for stable p-type ZnO

作者：Allenic Arnold; Guo Wei; Chen Yanbin; Katz Michael Brandon; Zhao Guangyuan; Che Yong; Hu Zhendong; Liu Bing; Zhang Sheng Bai; Pan Xiaoqing^*

来源：Advanced Materials, 2007, 19(20): 3333-+.

DOI：10.1002/adma.200700083

The role of dislocations in stable p-type phosphorus-doped ZnO epitaxial films is investigated. It is shown that good p-type conductivity is always associated with a considerable increase in the density of dislocations, which can aid the formation of shallow complex acceptors and provide sinks for native donors.

• 出版日期2007-10-19