The race of phase change memories to nanoscale storage and applications

作者：Lacaita Andrea L^*; Redaelli Andrea

来源：Microelectronic Engineering, 2013, 109: 351-356.

DOI：10.1016/j.mee.2013.02.105

• Phase change materials
• Phase change memory
• Resistive memories

The successful development of phase change memory technology (PCM) has been one of the most relevant novelties in the field of semiconductor memories of the last years. PCM products at the 45 nm node are being manufactured, mainly driven by applications in cellular phones. In the coming years, the consolidated know-how accumulated over five decades of research activities and more than ten years of industrial experience will further drive the race of resistive storage components to nanoscale, supporting the development of energy-aware, optimized memory systems for both stand-alone and embedded applications. This paper provides an overview of the most recent developments on phase change physics and technology, pointing out the key topics requiring additional investigation and further understanding.

• 出版日期2013-9