A Comparative Study on Si Activation in GaAs Between Laser Annealing and Rapid Thermal Annealing

作者：Ong C Y^*; Pey K L; Ng C M; Ong B S; Wong C P; Shen Z X; Xing Z X; Wang X C; Zheng H Y; Chan L

来源：Electrochemical and Solid-State Letters, 2010, 13(6): II200-II202.

DOI：10.1149/1.3376388

This work studies the use of pulsed laser annealing (LA) to realize high n-type dopant activation in GaAs. The results show that the defects induced by ion implantation can be effectively eliminated by pulsed LA. Besides preserving a good crystalline structure, a much higher dopant activation can be achieved by LA compared to the conventional rapid thermal annealing technique. The high levels of dopant activation obtained in the laser-annealed GaAs samples are attributed to the out-diffusion of the Zn dopant atoms (the p-type dopant of the GaAs substrate) as well as the Ga atoms from the substrate. Diodes activated by an appropriate fluence exhibit excellent rectifying characteristics.

• 出版日期2010
• 单位南阳理工学院