An analytic model for gate-all-around silicon nanowire tunneling field effect transistors

作者：Liu Ying; He Jin^*; Chan Mansun; Du Cai-Xia; Ye Yun; Zhao Wei; Wu Wen; Deng Wan-Ling; Wang Wen-Ping

来源：Chinese Physics B, 2014, 23(9): 097102.

DOI：10.1088/1674-1056/23/9/097102

• gate-all-round nanowire tunneling field effect transistor
• band to band tunneling
• analytic model

An analytical model of gate-all-around (GAA) silicon nanowire tunneling field effect transistors (NW-TFETs) is developted based on the surface potential solutions in the channel direction and considering the band to band tunneling (BTBT) efficiency. The three-dimensional Poisson equation is solved to obtain the surface potential distributions in the partition regions along the channel direction for the NW-TFET, and a tunneling current model using Kane's expression is developed. The validity of the developed model is shown by the good agreement between the model predictions and the TCAD simulation results.

• 出版日期2014-9
• 单位北京大学; 深港产学研基地