Low-Temperature Characteristics of HfOx-Based Resistive Random Access Memory

作者：Fang Runchen; Chen Wenhao; Gao Ligang; Yu Weijie; Yu Shimeng

来源：IEEE Electron Device Letters, 2015, 36(6): 567-569.

DOI：10.1109/LED.2015.2420665

• RRAM
• ReRAM
• resistive switching
• HfO2
• low temperature
• conduction mechanism
• hopping
• variation

This letter investigates the low-temperature switching characteristics and conduction mechanism of the Pt/HfOx/TiN resistive random access memory devices. For the first time, Pt/HfOx/TiN devices were demonstrated to be well functional at ultralow temperature (4 K). The switching voltages slightly increase at lower temperature. The failure state in a breakdown sample shows a metallic behavior, while the normal low-resistance states and high-resistance states show a semiconducting behavior. The slope change in the 1/kT plot below 77 K indicates a transition from the nearest-neighboring hopping to the variable range hopping. Different slopes or activation energies are observed at the same resistance level in the same device but after different programming cycles, indicating a cycle-dependent variation of the filament configuration.

• 出版日期2015-6