Mechanism for radiative recombination and defect properties of GaP/GaNP core/shell nanowires

作者：Dobrovolsky A^*; Stehr J E; Chen S L; Kuang Y J; Sukrittanon S; Tu C W; Chen W M; Buyanova I A

来源：Applied Physics Letters, 2012, 101(16): 163106.

DOI：10.1063/1.4760273

Recombination processes in GaP/GaNP core/shell nanowires (NWs) grown on a Si substrate by molecular beam epitaxy are examined using a variety of optical characterization techniques, including cw- and time-resolved photoluminescence and optically detected magnetic resonance (ODMR). Superior optical quality of the structures is demonstrated based on the observation of intense emission from a single NW at room temperature. This emission is shown to originate from radiative transitions within N-related localized states. From ODMR, growth of GaP/GaNP NWs is also found to facilitate formation of complex defects containing a P atom at its core that act as centers of competing non-radiative recombination.

• 出版日期2012-10-15