All-inorganic perovskite Cs4PbBr6 thin films in optoelectronic resistive switching memory devices with a logic application

作者：Cai, Huaizu; Lao, Meimei; Xu, Jun; Chen, Yukai; Zhong, Chujie; Lu, Shaoran; Hao, Aize; Chen, Ruqi^*

来源：Ceramics International, 2019, 45(5): 5724-5730.

DOI：10.1016/j.ceramint.2018.12.038

• Cs(4)PbBr6
• Perovskite
• Resistive switching
• Logic gate
• Photoresponse
• Nonvolatile memory

Perovskite-based Cs4PbBr6 has potential applications in optoelectronic devices, such as photodetectors, electroluminescence devices and color converters. All-inorganic perovskite Cs4PbBr6 thin films were successfully prepared by a simple low-temperature synthesis method and were first implemented as an insulating layer in Au/Cs4PbBr6/PEDOT:PSS/Pt devices. The memory devices possess reproducible bipolar resistive switching behavior, low operating voltages, good endurance, and long retention times. Furthermore, the novel sandwich architecture enables the application of the Cs4PbBr6 films as memristors and photoresponsive behaviors. Considering the distinct photoresponses of the resistance state as a nonvolatile memory, the devices can be used as a logical "OR" gate by applying bias voltages and light illumination as input signals. The formation and annihilation of Br- ion vacancy filaments induced by the external bias and light illumination can result in pronounced resistive switching performance. It is believed that solution-processed Cs4PbBr6-based devices have great potential for technological deployment at the forefront as a photonic nonvolatile memory as well as integrated modulating and arithmetic functions.

• 出版日期2019-4-1
• 单位新疆大学; 华南农业大学; 中国科学院长春应用化学研究所