A broadband Low Noise Amplifier with built-in linearizer in 0.13-mu m CMOS process

作者：Rastegar Habib^*; Ryu Jee Youl

来源：Microelectronics Journal, 2015, 46(8): 698-705.

DOI：10.1016/j.mejo.2015.05.006

• Low Noise Amplifier (LNA)
• CMOS
• High linearity
• Chebyshev filter
• Inverter

A linearized ultra-wideband (UWB) CMOS Low Noise Amplifier (LNA) is presented in this paper. The linearity performance is enhanced by exploiting PMOS-NMOS common-gate (CG) inverter as a built-in linearizer which leads to cancel out both the second- and third-order distortions. Two inductors are placed at the drain terminals of CG transistors in the built-in linearizer to adjust the phase and magnitude of the third-order distortion. A second-order band-pass Chebyshev filter is utilized in the input port of common-source (CS) configuration to provide broadband input matching at 3.1-10.6 GHz frequency range to a 50-Omega antenna. Series and shunt peaking techniques are employed to extend the bandwidth (BW) and to flatten the gain response. Simulated in 0.13 mu m CMOS technology, the CMOS LNA exhibits state of the art performance consuming 17.92 mW of dc power. The CMOS LNA features a maximum gain of 10.24 dB, 0.9-4.1 dB noise figure (NF), and a third-order input intercept point (IIP3) of 6.8 dBm at 6.3 GHz.

• 出版日期2015-8