Comprehensive Study of the X-Ray Photoelectron Spectroscopy Peak Shift of La-Incorporated Hf Oxide for Gate Dielectrics

作者:Yamamoto Takashi*; Ogawa Shingo; Tsuji Jun ichi; Kita Koji; Tagami Katsunori; Uda Tsuyoshi; Hosoi Takuji; Shimura Takayoshi; Watanabe Heiji
来源:Japanese Journal of Applied Physics, 2012, 51(4): 048005.
DOI:10.1143/JJAP.51.048005

摘要

We measured the X-ray photoelectron spectroscopy spectra of the La-incorporated Hf oxide and observed the apparent Hf 4f peak shift toward a lower energy as La concentration increased. To investigate the origin of these peak shifts, we performed first-principles calculations, in which the degree and direction of the obtained peak shifts agreed well with the above-mentioned experimentally observed spectra. Also, we found that the main reason for these peak shifts was the charge-transfer effect. Estimation of the degree of the interface dipole was made possible by a comparison between the experimental values and the theoretical values of the peak shifts.

  • 出版日期2012-4

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