Mechanism of metallic conductivity at the interface of organic dielectrics

作者:Nikitenko V R*; Tameev A R; Vannikov A V
来源:Technical Physics Letters, 2009, 35(9): 823-826.
DOI:10.1134/S1063785009090119

摘要

A physical model of the metallic-type conductivity at the interface between an organic semiconductor or dielectric and a metals or another organic material is proposed. The conductivity arises due to the formation of geminal pairs with a rather high surface density at the interface. Conditions under which the transitions between molecules require neither thermal activation nor tunneling for a significant fraction of charge carriers are determined. The values of electric conductivity and carrier mobility are estimated using numerical modeling.

  • 出版日期2009-9