摘要

The interplay between radiation effects and reliability is discussed for micro- and optoelectronic devices. Topics discussed include basic approaches such as burn-in and electrical screening that are used to improve component reliability, synergistic effects between reliability and radiation effects, the impact of microdose damage from heavy ions on reliability of high-density digital circuits, and assessing the overall risk to components in space that are subjected to overstress conditions.

  • 出版日期2010-12