Multiscale simulation of carbon nanotube transistors

作者：Maneux Cristell^*; Fregonese Sebastien; Zimmer Thomas; Retailleau Sylvie; Huu Nha Nguyen; Querlioz Damien; Bournel Arnaud; Dollfus Philippe; Triozon Francois; Niquet Yann Michel; Roche Stephan

来源：Solid-State Electronics, 2013, 89: 26-67.

DOI：10.1016/j.sse.2013.06.013

• Carbon nanotube transistors
• NGF simulation
• Monte Carlo simulation
• Physical simulation TCAD
• Compact modelling

In recent years, the understanding and accurate simulation of carbon nanotube-based transistors has become very challenging. Conventional simulation tools of microelectronics are necessary to predict the performance and use of nanotube transistors and circuits, but the models need to be refined to properly describe the full complexity of such novel type of devices at the nanoscale. Indeed, many issues such as contact resistance, low dimensional electrostatics and screening effects, demand for more accurate quantum approaches. This article reviews recent progresses on multiscale simulations which aim at bridging first principles calculations with compact modelling, including the comparison between semi-classical Monte Carlo and quantum transport approaches.

• 出版日期2013-11
• 单位中国地震局