科研之友
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摘要
Arsenic (As) diffusion in germanium (Ge) has been studied by implanting As in a Ge substrate with high boron (B) background doping. The high hole density induced by the B doping suppresses negatively charged vacancies (V) in Ge. Under this condition, we have investigated the dependence of As diffusion on the dopant-vacancy pairs (As+V0) by secondary ion mass spectroscopy. After rapid thermal annealing at 600-750 degrees C, the chemical profiles of As do not change in the highly B doped Ge. Experimental results suggest that the (As+V0) pairs are not the diffusion vehicles of As in Ge. Activation energy of the (As+V0) pairs has to be larger than 3.25 eV.
- 出版日期2013-1-17
