Atmospheric oxygen plasma activation of silicon (100) surfaces

作者：Habib Sara B; Gonzalez Eleazar II; Hicks Robert F^*

来源：Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films , 2010, 28(3): 476-485.

DOI：10.1116/1.3374738

• bonds (chemical)
• contact angle
• elemental semiconductors
• etching
• ground states
• hydrophilicity
• oxidation
• plasma chemistry
• plasma materials processing
• reaction kinetics
• silicon
• surface chemistry
• surface energy
• X-ray photoelectron spectra

Silicon (100) surfaces were converted to a hydrophilic state with a water contact angle of < 5 degrees by treatment with a radio frequency, atmospheric pressure helium, and oxygen plasma. A 2 in. wide plasma beam, operating at 250 W, 1.0 l/min O(2), 30 l/min He, and a source-to-sample distance of 3 +/- 0.1 mm, was scanned over the sample at 100 +/- 2 mm/s. Plasma oxidation of HF-etched silicon caused the dispersive component of the surface energy to decrease from 55.1 to 25.8 dyn/cm, whereas the polar component of the surface energy increased from 0.3 to 42.1 dyn/cm. X-ray photoelectron spectroscopy revealed that the treatment generated a monolayer of covalently bonded oxygen on the Si(100) surface 0.15 +/- 0.10 nm thick. The surface oxidation kinetics have been measured by monitoring the change in water contact angle with treatment time, and are consistent with a process that is limited by the mass transfer of ground-state oxygen atoms to the silicon surface.

• 出版日期2010-5