Dual barrier InAlN/AlGaN/GaN-on-silicon high-electron-mobility transistors with Pt- and Ni-based gate stacks

作者：Floros Konstantinos^*; Li Xu; Guiney Ivor; Cho Sung Jin; Hemakumara Dilini; Wallis David J; Wasige Edward; Moran David A J; Humphreys Colin J; Thayne Iain G

来源：Physica Status Solidi A-Applications and Materials Science, 2017, 214(8): 1600835.

DOI：10.1002/pssa.201600835

• AlGaN
• GaN
• high electron mobility transistors
• InAlN
• silicon
• transition metals

In this work, we report the performance of 3 mu m gate length dual barrier InAlN/AlGaN/GaN HEMTs on Si substrates with gate-drain contact separations in the range 4-26 mu m. Devices with Pt- and Ni-based gates were studied and their leakage characteristics are compared. Maximum drain current I-DS of approximate to 1Amm(-1), maximum extrinsic transconductance g(m) approximate to 203mSmm(-1) and on-resistance R-on approximate to 4.07mm for gate to drain distance L-GD=4 mu m were achieved. Nearly ideal sub-threshold swing of approximate to 65.6mVdec(-1) was obtained for L-GD=14 mu m. The use of Pt-based gate metal stacks led to a two to three orders of magnitude gate leakage current decrease compared to Ni-based gates. The influence of InAlN layer thickness on the transistor transfer characteristics is also discussed.

• 出版日期2017-8