Development of Transient Voltage Suppressor Device with Abrupt Junctions Embedded by Epitaxial Growth Technology

作者：Choi S S; Cho D H; Shim K H^*

来源：Electronic Materials Letters, 2009, 5(2): 59-62.

DOI：10.3365/eml.2009.06.059

• Zener
• TVS
• ESD
• HBM
• epitaxy
• avalanche
• breakdown
• LED

A new Zener transient voltage suppressor (TVS) consisting of abrupt junctions of epitaxial layers has been developed. Differential resistance in the breakdown region is obtained as low as 5 Omega and the reverse leakage current is substantially suppressed by one to two orders of magnitude compared to a conventional Zener diode. The reliability of the TVS is confirmed based on its maximum allowed reverse current level and the robustness of its electrostatic discharge endurance against /- 8 kV of the human body model (HBM) at a wide range of operating temperatures (30 degrees C to 180 degrees C). This significant improvement is primarily attributed to the abrupt junction profile formed by low-temperature processes, followed by epitaxial growth technology prohibiting redistribution of dopant elements.

• 出版日期2009-6