Atomic layer deposition of high-permittivity TiO2 dielectrics with low leakage current on RuO2 in TiCl4-based processes

作者：Aarik Jaan^*; Hudec Boris; Husekova Kristina; Rammula Raul; Kasikov Aarne; Arroval Tonis; Uustare Teet; Froehlich Karol

来源：Semiconductor Science and Technology, 2012, 27(7): 074007.

DOI：10.1088/0268-1242/27/7/074007

Capacitor structures with undoped and Al-doped TiO2 dielectrics grown on RuO2 electrodes by TiCl4-based atomic layer deposition were investigated. In the undoped films, relative permittivity values up to 160 were obtained. The leakage current densities were as low as 3 x 10(-8) and 3 x 10(-7) A cm(-2) in the TiO2 films with capacitance equivalent thicknesses (CETs) of 0.49 and 0.39 nm, respectively, at a voltage of 0.8 V. Al doping of TiO2 led to a decrease of leakage current as well as permittivity. As a consequence, comparable leakage current densities were obtained for undoped and Al-doped films at similar CET values.

• 出版日期2012-7
• 单位中国科学院电工研究所