摘要
We present a theoretical study on the confined carrier and exciton energies in single Si/SiO2 quantum wires. The calculations are performed within the effective mass approximation and consider abrupt and non-abrupt interfaces. The results show the existence of a diameter-dependent exciton-related emission peak in the red region for crystalline silicon (c-Si) wire structures, in agreement with recent experimental results. As the wire diameter is reduced, a blue shift is observed for the ground-state exciton energies. When a non-abrupt interface picture is considered, the blue shift is more pronounced, giving rise to the possibility of light emission from the infrared to the red-yellow spectral regions, depending on the wire diameter.
- 出版日期2001-9