A 2D simulation study and characterization of a novel vertical SOI MOSFET with a smart source/body tie

作者：Lin, Jyi Tsong^*; Lee, Tai Yi; Lin, Kao Cheng

来源：Semiconductor Science and Technology, 2008, 23(7): 075015.

DOI：10.1088/0268-1242/23/7/075015

A novel vertical silicon-on-insulator (SOI) metal-oxide-semiconductor field-effect transistor (MOSFET) with a smart source/body contact, SSBVMOS, is presented here for the first time. 2D simulations reveal that the SSBVMOS reduces self-heating effects, with the lattice temperature reduced by 14% and the hole temperature reduced by 25%. The SSBVMOS also eliminates the floating body effect, something that other SOI vertical MOSFETs are unable to accomplish, regardless of the thickness of the thin film. The SSBVMOS is further found to have a better drain-induced barrier lowering and subthreshold swing than either a conventional vertical MOSFET or an SOI vertical MOSFET. Moreover, these results are achieved using typical pillar heights and buried oxide thicknesses. Should future technological advances allow for lower pillars or thinner buried oxides, the SSBVMOS performance would further increase.

• 出版日期2008-7
• 单位中山大学