摘要

A new instrumentation was developed to study the in situ electrical and crystallographic properties of organic thin film transistor during vacuum deposition. We characterized pentacene (PEN) and perfluoro-pentacene (PFP) co-deposited organic thin film transistor with various mixing ratio using this equipment. Lattice parameters and crystal orientations of PEN and PFP alloyed phases (named sigma-phase and -phase) were determined using an in situ two-dimensional grazing incidence X-ray diffraction (2D-GIXD) measurement. The observed 2D-GIXD patterns clarified that the sigma-phase is in triclinic unit cell with the following lattice parameters: a = 0.67nm, b = 0.75nm, c = 1.58nm, = 95.7 degrees = 94.2 degrees and = 84.0 degrees. The c plane of sigma-phase crystal is parallel to the substrate surface. The -phase is also in triclinic with the following lattice parameters: a = 0.66nm, b = 0.69nm, c = 1.56nm, = 109.5 degrees = 113.0 degrees and = 81.5 degrees. The a plane of -phase crystal was parallel to the substrate surface. It was also found the best symmetric hole and electron mobility ((h) = 5.5 x 10(-4) cm(2)V(-1)s(-1) and (e) = 5.1 x 10(-4) cm(2)V(-1)s(-1)) were obtained at PEN: PFP = 1:1.

  • 出版日期2016