Magnetron sputtering deposition and characterization of GdMnO3 thin films

作者：Vlakhov E^*; Blagoev B; Mateev E; Neshkov L; Nurgaliev T; Lakov L; Toncheva K; Marinov Y; Nenkov K; Radulov I; Piotrowski K; Paszkowicz W; Szewczyk A; Baran M; Szymczak R

来源：Journal of Optoelectronics and Advanced Materials, 2007, 9(2): 456-459.

• GdMnO3
• thin films
• magnetron sputtering
• misfit stress

Thin films of GdMnO3 were deposited by RF magnetron sputtering on SrTiO3 (100) and Si (100) substrates. XRD analysis revealed that GdMnO3 films grown on SrTiO3 (100) substrates are well textured. The out-of-plane c axis is elongated by 0.75%-1.10% in comparison to bulk lattice value and depends on film thickness. The minimal elongation was found for the GdMnO3 film deposited on a La0.7Sr0.3MnO3 (LSMO) buffer layer. MM vs. T (5 < T < 100K) as well as M vs. H (T=5K) dependences obtained for a 100 nm thick sample of GdMnO3/SrTiO3 (100) point to the absence of magnetic anisotropy unlike the case of a GdMnO3 single crystal. This effect is attributed to the significant structural disorder due to misfit stress. AC resistivity measurements show a measurable influence of the static magnetic field on the impedance parameters, in accordance with the (H, T)-phase diagram of the GdMnO3 single crystal.

• 出版日期2007-2