Analysis of High Efficiency InGaN Multiple-Quantum-Well Light-Emitting-Diodes Using InGaN Step-Graded Barriers

作者：Hengsteler J; Prajoon P; Nirmal D^*

来源：Journal of Nanoelectronics and Optoelectronics, 2018, 13(6): 939-943.

DOI：10.1166/jno.2018.2332

• Compositionally Step Graded (CSG)
• Efficiency Droop
• InGaN
• Light-Emitting Diode (LED)
• Multiple Quantum Well (MQW)
• Quantum Well
• Tunneling

In this work tunneling in the active region of an InGaN multiple-quantum-well (MQW) light-emitting diode is analyzed. It's suspected to lead to leakage current out of the active quantum well region suppressing the internal quantum efficiency (IQE) and leading to efficiency droop at high injection currents. In addition, a modification is made in the conventional ABC model to estimate the IQE by including the tunneling currents, to explain the carrier injection efficiency at high current densities. Furthermore, we designed and analyzed InGaN LEDs with compositionally step graded (CSG) InGaN barriers to achieve a higher internal quantum efficiency. The simulation results show an improved IQE and reduced efficiency droop of 2.45% at% at an injection current of 350 mA compared to a linear InGaN barrier MQW LED.

• 出版日期2018-6