Development of Si IGBT Phase-Leg Modules for Operation at 200 degrees C in Hybrid Electric Vehicle Applications

作者：Xu Zhuxian^*; Jiang Dong; Li Ming; Ning Puqi; Wang Fei; Liang Zhenxian

来源：IEEE Transactions on Power Electronics, 2013, 28(12): 5557-5567.

DOI：10.1109/TPEL.2013.2242096

• High temperature packaging
• hybrid electric vehicle (HEV)
• power module
• Si insulated-gate bipolar transistor (IGBT)
• 200 degrees C

A Si insulated-gate bipolar transistor (IGBT) phase-leg module is developed for operating at 200 degrees C in hybrid electric vehicle applications utilizing the high temperature packaging technologies and appropriate thermal management. The static and switching electrical characteristics of the fabricated power module are tested at various temperatures, showing that the module can operate reliably with increased but acceptable losses at 200 degrees C. The criterion on thermal performance is given to prevent thermal runaway caused by fast increase of the leakage current during a high temperature operation. Afterward, the thermal management system is designed to meet the criterion, the performance of which is evaluated with experiment. Furthermore, two temperature-sensitive electrical parameters, on-state voltage drop and the switching time, are employed for thermal impedance characterization and the junction temperature measurement during converter operation, respectively. Finally, a 10-kW buck converter prototype composed of the module assembly is built and operated at the junction temperature up to 200 degrees C. The experimental results demonstrate the feasibility of operating Si device-based converters continuously at 200 degrees C.

• 出版日期2013-12