Nickel nanocrystals with HfO2 blocking oxide for nonvolatile memory application

作者：Yang, F M^*; Chang, T C; Liu, P T; Chen, U S; Yeh, P H; Yu, Y C; Lin, J Y; Sze, S M; Lou, J C

来源：Applied Physics Letters, 2007, 90(22): 222104.

DOI：10.1063/1.2743926

A distributed charge storage with Ni nanocrystals embedded in the SiO2 and HfO2 layer has been fabricated in this study. The mean size and aerial density of the Ni nanocrystals are estimated to be about 5 nm and 3.9x10(12)/cm(2), respectively. The nonvolatile memory device with Ni nanocrystals exhibits 1 V threshold voltage shift under 4 V write operation. The device has a long retention time with a small charge lose rate. Besides, the endurance of the memory device is not degraded up to 10(6) write/erase cycles.

• 出版日期2007-5-28
• 单位中山大学; 清华大学