Microstructure of Czochralski silicon co-implanted with helium and hydrogen and treated at high temperature and pressure

作者：Misiuk A^*; Barcz A; Surma B; Bak Misiuk J; Wnuk A

来源：Opto-Electronics Review, 2004, 12(4): 383-387.

• silicon
• implantation
• hydrogen
• helium
• high pressure
• microstructure

The effect of high temperature (HT) up to 1400 K and high pressure (HP) up to 1.1 GPa on Cz:-Si co-implanted with He+ (energy E= 50 KeV, dose, D-He 5 x 10(16) cm(-2)) and H-2(+) (E = 135 KeV D-H = 5 x 10(16) cm(-2)). with almost overlapping implantation-disturbed layers, has been investigated. Numerous extended defects are created at HT and HP near the He and H concentration peaks, the overall structural perfection of annealed Si:He,H improves with HP. Oxygen gettering in the implantation-disturbed areas is much less pronounced under HP The observed effects air related. among others. to decreased hydrogen out-diffusion and lowered dimensions of gas filled defects in Si:He,H treated under HP. Qualitative explanation of HP-mediated gettering of oxygen has been proposed.

• 出版日期2004