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摘要
The relaxation dynamics of photoexcited hot carriers in Ge(x)Si(1-x) islands grown on Si(111)-(7 x 7) have been studied with the spatial and temporal resolution of time-resolved two-photon photoemission electron microscopy. The relaxation dynamics of the excited electronic states within the Ge-rich Ge(x)Si(1-x) dots and the surrounding Si-rich wetting layer are found to vary significantly below the conduction-band minimum. These differences are ascribed to faster hot-carrier-diffusion rates for the islands compared to those for the wetting layer.
- 出版日期2012-1-17
