Phase transitions in [001]-oriented morphotropic PbZr0.52Ti0.48O3 thin film deposited onto SrTiO3-buffered Si substrate

作者：Shi Yin^*; Cueff M; Niu Gang; Le Rhun G; Vilquin B; Saint Girons G; Bachelet R; Gautier B; Robach Y; Gemeiner P; Guiblin N; Defay E; Dkhil B

来源：Journal of Applied Physics, 2014, 115(21): 214108.

DOI：10.1063/1.4881818

An 85 nm-thick morphotropic PbZr0.52Ti0.48O3 (PZT) film grown epitaxially and [001]-oriented onto a SrTiO3-buffered Si-wafer is investigated using temperature dependent X-ray diffraction. Two phase transitions, at T-rt similar to 500K and T-c similar to 685 K, are evidenced and are attributed to structural phase transitions from monoclinic-like to tetragonal-like phase and from tetragonal to paraelectric phase, respectively. The stronger upper shift of T-rt value with respect to the bulk one and the weakly affected T-c (T-c bulk similar to 665 K) are explained assuming misfit strain changes when crossing T-rt. This finding opens new perspectives for piezoelectric PZT films in harsh applications.

• 出版日期2014-6-7
• 单位中国地震局