科研之友
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摘要
Vacuum field emission (VFE) microtriodes utilizing nanodiamond emitters, integrated with a selfaligned silicon gate and an anode and fabricated by the mold-transfer patterning technique on a silicon- on-insulator (SOI) substrate, have been developed. The nanodiamond VFE microtriodes were fabricated by an integrated circuit-compatible microfabrication process in conjunction with chemical vapor deposition of nanodiamond into the inverted-pyramidal molds micropatterned on the SOI substrate, which provides precision controlled emitter-gate alignment and spacing. The devices exhibited triode characteristics showing anode field induced electron emission with gate controlled emission current modulation at low operating voltages, agreeing with its electron emission transport model. A high current density of 150 mA/cm(2) is achievable from the device with the anode-emitter spacing of 4 mu m at low operating voltages of V-a = 48.5V and V-g = 5V. The ac characteristics of the microtriodes for signal amplification were experimentally evaluated, and the results conformed to the proposed small signal equivalent circuit model. The triode small signal parameters were found to be dependent on the device geometry, which could be tailored to meet various applications by designing the physical structures of the device with the desired parameters. These results demonstrate the potential use of the nanodiamond VFE microtriodes for vacuum microelectronic applications.
- 出版日期2017-5
- 单位清华大学
