Direct preparation of crystalline CuInS2 thin films by radiofrequency sputtering

作者：Cayzac R^*; Boulc'h F; Bendahan M; Lauque P; Knauth P

来源：Materials Science and Engineering B-Solid State Materials for Advanced Technology, 2009, 157(1-3): 66-71.

DOI：10.1016/j.mseb.2008.12.018

• Chalcogenides
• Thin films
• Sputtering
• Grazing incidence X-ray diffraction
• Atomic force microscopy

Crystalline chalcopyrite CuInS2 thin films were obtained by r.f. sputtering at room temperature using a crystalline CuInS2 target and without any subsequent toxic gas. chemical or heat treatment. A systematic study of phase formation by X-ray diffraction and Raman spectroscopy and of morphology by scanning electron microscopy and atomic force microscopy was performed as function of relevant sputtering parameters: argon pressure, r.f. power and time of deposition. XRD studies show that films are amorphous until a critical thickness is reached, where they transform into crystalline chalcopyrite films with preferential (112) orientation and averagegrain size of 25-100nm.At low deposition rates, smooth films were obtained, whereas at high deposition rates, films are covered with surface particles. Films were p-type conducting with bulk carrier density about 10(18)/cm(3). determined by Hall effect measurements.

• 出版日期2009-2-15