摘要

Fully epitaxial Fe/MgO/Fe(001) magnetic tunneling junctions (MTJs) were fabricated on GaAs(001)-4x6 surface. In situ surface magneto-optical Kerr effect (SMOKE) measurements showed thes MOKE loop is of a typical two-step character as the applied magnetic field is along [1 (1) over bar0] direction. It was found that the coercivity of bottom Fe electrode is about 20 mT which is about 20 times higher than that of top Fe layer. The remarkable increase of the coercivity in the bottom Fe layer is attributed to the pinning effect at MgO/Fe/GaAs (001) interfaces. Spin-resolved valence band photoemission spectroscopy measurements showed that after covering MgO on Fe(001) surface the spin polarization at Fermi level of bcc Fe(001) reversed the sign from negative into positive. which is ascribed to a selective modification of the electronic states involved at the MgO/Fe(001) interface.