科研之友
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摘要
In this paper, we report on comprehensive theoretical optical properties analysis and experimental device electrical-optical characterization of long wavelength GaInNAs edge-emitting laser diode. The theoretical analysis demonstrates that a high quality GaInNAs active region and device design are devised, where high material gain near 1.3 mu m and optimal optical mode confinement are calculated. Experimentally, room temperature lasing emission around 1.27 mu m with threshold current densities of 670-810 A/cm(2) is obtained from the fabricated broad area GaInNAs edge-emitting laser grown by molecular beam epitaxy technique.
- 出版日期2012-1
