Preparation, thermal stability, and electrical transport properties of In/Sn codoped beta-Zn4Sb3 single crystal

作者：Shai Xuxia; Deng Shukang^*; Shen Lanxian; Meng Daiyi; Li Decong; Zhang Yanjun; Jiang Xianyan

来源：Physica Status Solidi (B) Basic Research, 2015, 252(4): 795-799.

DOI：10.1002/pssb.201451366

• carrier mobility
• carrier transport
• electrical properties
• single crystals
• thermoelectric materials
• Zn4Sb3

In and Sn codoped beta-Zn4Sb3 single crystals were prepared by a Sn-flux method according to the formula Zn4.4Sb3Sn3Inx(x = 00.5). The thermal weight loss is suppressed completely until the melting point of the single crystals. All crystals exhibit p-type conduction. The carrier mobility of the single crystals is increased, compared to a beta-Zn4Sb3 polycrystalline sample. All samples possess relatively high electrical conductivity, reaching 6.3 x 10(4) S/m for the sample with x = 0.18. The Seebeck coefficient is enhanced on increasing of the total content of In and Sn. The sample with x = 0.5 exhibits excellent electrical properties, and shows a maximal power factor of 1.53 x 10(-3) W/m/K-2 at 603 K.

• 出版日期2015-4
• 单位云南师范大学