Analytical drain current model for symmetric dual-gate amorphous indium gallium zinc oxide thin-film transistors

作者：Qin, Ting; Liao, Congwei^*; Huang, Shengxiang; Yu, Tianbao; Deng, Lianwen

来源：Japanese Journal of Applied Physics, 2018, 57(1): 014301.

DOI：10.7567/JJAP.57.014301

• A-IGZO TFTS
• DENSITY-OF-STATES
• VOLTAGE CHARACTERISTICS
• MOSFET THEORY
• IMPLEMENTATION
• INSTABILITY
• EXTRACTION
• REDUCTION
• BIAS

An analytical drain current model based on the surface potential is proposed for amorphous indium gallium zinc oxide (a-InGaZnO) thin-film transistors (TFTs) with a synchronized symmetric dual-gate (DG) structure. Solving the electric field, surface potential (phi(S)), and central potential (phi(0)) of the InGaZnO film using the Poisson equation with the Gaussian method and Lambert function is demonstrated in detail. The compact analytical model of current-voltage behavior, which consists of drift and diffusion components, is investigated by regional integration, and voltage-dependent effective mobility is taken into account. Comparison results demonstrate that the calculation results obtained using the derived models match well with the simulation results obtained using a technology computer-aided design (TCAD) tool. Furthermore, the proposed model is incorporated into SPICE simulations using Verilog-A to verify the feasibility of using DG InGaZnO TFTs for high-performance circuit designs.

• 出版日期2018-1
• 单位中南大学