A Novel 3D Integration Scheme for Backside Illuminated CMOS Image Sensor Devices

作者：Ko Cheng Ta^*; Hsiao Zhi Cheng; Chang Hsiang Hung; Lyu Dian Rong; Hsu Chao Kai; Fu Huan Chun; Chien Chun Hsien; Lo Wei Chung; Chen Kuan Neng

来源：IEEE Transactions on Device and Materials Reliability, 2014, 14(2): 715-720.

DOI：10.1109/TDMR.2014.2311887

• CMOS image sensor
• backside illuminated
• 3D integration

A novel backside-illuminated CMOS image sensor (BSI-CIS) scheme and process are developed and demonstrated. This innovative scheme can be realized without fusion oxide bonding and through-silicon via (TSV) fabrication. This wafer-level TSV-less BSI-CIS scheme includes transparent ultrathin silicon (similar to 3.6 mu m) and uses several bonding technologies. The characterization and assessment results indicate that the integration scheme possesses excellent electrical integrity and reliability. In addition, good quality results of the image functional test demonstrate the excellent performance of this scheme. This novel scheme also provides a realizable low-cost solution for the next-generation CIS and further 3-D novel BSI-CIS scheme.

• 出版日期2014-6